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Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Frontiers of Environmental Science & Engineering 2015, Volume 9, Issue 5,   Pages 905-911 doi: 10.1007/s11783-015-0786-x

Abstract: The current study investigated the effects of nano-silicon (Si) and common Si on lead (Pb) toxicity,nano-Si were 1.8%–5.2% and 3.3%–11.8% higher, respectively, than those of plants with no Si supply (controlCompared to the control, Pb concentrations in rice shoots supplied with common Si and nano-Si were reducedPb concentrations in rice grains treated with common Si and nano-Si decreased by 21.3%–40.9% and 38.6%The results of the study indicate that nano-Si is more efficient than common Si in ameliorating the toxic

Keywords： silicon (Si)     lead (Pb)     rice (Oryza sativa L.)     toxicity     accumulation    

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Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

Frontiers of Chemical Science and Engineering 2020, Volume 14, Issue 6,   Pages 997-1005 doi: 10.1007/s11705-019-1906-0

Abstract: Among them, micro-crystalline Si and Ge based thin film solar cells have advantages of high efficiencythe record efficiency of 24.80% has been realized with the typical quadruple junction structure of a-Si:H/a-Si Ge :H/µc-Si:H/µc-Si Ge :H.

Keywords： thin films     solar cells     quadruple junction solar cell     amorphous silicon     silicon germanium alloy     quantum    

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Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated with mesoporous

Frontiers in Energy 2021, Volume 15, Issue 3,   Pages 772-780 doi: 10.1007/s11708-021-0783-7

Abstract: reaction and a good candidate for cocatalyst to enhance the photoelectrochemical (PEC) performance of Si-basedto improve its catalytic activity and to construct a mechanically and chemically stable cocatalyst/Sihighly-ordered mesoporous MoS2 was synthesized and decorated onto a TiO2 protected p-siliconThis meso-MoS2/TiO2/p-Si hybrid photocathode exhibited significantly enhanced PECAdditionally, this meso-MoS2/TiO2/p-Si photocathode showed an excellent PEC ability

Keywords： photoelectrocatalysis     hydrogen evolution     Si photocathode     mesoporous MoS2    

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High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 78-84 doi: 10.1007/s11708-016-0435-5

Abstract: n-type CZ-Si wafers featuring longer minority carrier lifetime and higher tolerance of certain metalcontamination can offer one of the best Si-based solar cells.In this study, Si heterojuction (SHJ) solar cells which was fabricated with different wafers in the topsunlight into electrical power, the pyramid size, pyramid density and roughness of surface of the Cz-Si

Keywords： n-type Cz-Si     thinner wafer     surface texture     high efficiency     SHJ solar cell    

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Porous silica synthesis out of coal fly ash with no residue generation and complete silicon separation

Frontiers of Environmental Science & Engineering 2023, Volume 17, Issue 9, doi: 10.1007/s11783-023-1712-2

Abstract:

● Both amorphous and crystalline silicon are completely separated

Keywords： Coal fly ash     Alkali fusion     Micro-/meso-porous Si     Zeolite MCM-48     Crystalline transformation    

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An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 67-71 doi: 10.1007/s11708-016-0430-x

Abstract: serious light-induced degradation (LID) of commercial solar cells based on the boron-doped crystalline silicon(c-Si), which are formed under the injection of excess carriers induced either by illumination or applyingThis technology is of significance for the suppression of LID of c-Si solar cells for the industrial

Keywords： Boron-oxygen defects     c-Si solar cells     light-induced degradation     passivation     forward bias    

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SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 52-59 doi: 10.1007/s11708-016-0429-3

Abstract: Surface passivation is one of the primary requirements for high efficient silicon solar cells.analyzing the minority carrier lifetime and the surface recombination velocity of n-type and p-type siliconBy utilizing the LPD SiO film as surface passivation layer, a 19.5%-efficient silicon solar cell on

Keywords： Si solar cell     passivation     SiO2     liquid phase deposition     carrier lifetime    

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POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 42-51 doi: 10.1007/s11708-016-0433-7

Abstract: POCl diffusion is currently the standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl tube diffused emitters.

Keywords： POCl3 diffusion     emitter recombination     oxidation     silicon    

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Achieving 12.0% Solar-to-Hydrogen Efficiency with a Trimetallic-Layer-Protected and Catalyzed SiliconPhotoanode Coupled with an Inexpensive Silicon Solar Cell Article

Lingyun He, Xin Hong, Yiqing Wang, Zhonghang Xing, Jiafeng Geng, Penghui Guo, Jinzhan Su, Shaohua Shen

Engineering 2023, Volume 25, Issue 6,   Pages 128-137 doi: 10.1016/j.eng.2022.03.023

Abstract: 0cm 0.0001pt; text-align:justify">n-Type silicon(n-Si), with surface easily oxidized and passivated in an aqueous electrolyte, has suffered from sluggishtrimetallic Ni0.9Fe0.05Co0.05 protective layer is successfully electrodeposited on a p+n-SiThe prepared Ni0.9Fe0.05Co0.05/p+n-Si photoanode exhibits∙cm-2 at 1.23 V versus RHE, which significantly outperforms the Ni/p+n-Si

Keywords： n-Type Si     Photoanode     Water splitting     Photovoltaic/photoelectrochemical device    

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Heterogeneous III-V silicon photonic integration: components and characterization Special Feature on Optoelectronic Devices and Inte

Shang-jian ZHANG, Yong LIU, Rong-guo LU, Bao SUN, Lian-shan YAN

Frontiers of Information Technology & Electronic Engineering 2019, Volume 20, Issue 4,   Pages 472-480 doi: 10.1631/FITEE.1800482

Abstract:

Heterogeneous III-V silicon (Si) photonic integration is considered one of the key methods for realizingWe review the recent progress in heterogeneous III-V/Si photonic integration, including transceivingthe on-wafer characterization of photonic integration circuits, especially on the heterogeneous III-V/Si

Keywords： Heterogeneous photonic integration     Optical interconnection     On-wafer characterization    

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Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

Frontiers in Energy 2017, Volume 11, Issue 1,   Pages 85-91 doi: 10.1007/s11708-016-0437-3

Abstract: The intrinsic a-Si:H passivation layer inserted between the doped a-Si:H layer and the c-Si substrateis very crucial for improving the performance of the a-Si:H/c-Si heterojunction (SHJ) solar cell.The passivation performance of the a-Si:H layer is strongly dependent on its microstructure.Usually, the compact a-Si:H deposited near the transition from the amorphous phase to the nanocrystallineIn this paper, intrinsic a-Si:H layers were prepared on n-type Cz c-Si substrates by 27.12 MHz PECVD

Keywords： PECVD     high pressure and high power     a-Si:H microstructure     passivation     heterojunction solar cell    

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Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Frontiers in Energy 2011, Volume 5, Issue 3,   Pages 305-312 doi: 10.1007/s11708-011-0155-9

Abstract: A computer simulator with a global model of heat transfer during crystal growth of Si for solar cellscomputer simulator to Czochralski (CZ) growth processes and directional solidification processes of SiSome typical results, including the turbulent melt flow in a large-scale crucible of a CZ-Si process,effective tool in the analysis and improvement of crystal growth processes and furnace designs for solar Si

Keywords： computer modeling     silicon     crystal growth     solar cells    

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Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Frontiers of Mechanical Engineering 2021, Volume 16, Issue 3,   Pages 570-579 doi: 10.1007/s11465-021-0642-6

Abstract: The interfacial wear between silicon and amorphous silica in water environment is critical in numerousHerein, reactive force field simulations are utilized to study the interfacial process between siliconIn addition to more Si-O-Si bridge bonds formed between the abrasive and the substrate, new removal pathwayshigher velocity, the abrasive can induce extended tribochemical reactions and form more interfacial Si-O-Si

Keywords： silicon     ReaxFF     molecular dynamics     friction     damage    

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Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Frontiers of Mechanical Engineering 2007, Volume 2, Issue 1,   Pages 120-124 doi: 10.1007/s11465-007-0021-y

Abstract: Light-weight high-silicon aluminum alloys are used for electronic packaging in the aviation and space-flightAl-30Si and Al-40Si are fabricated with air-atomization and vacuum-canning hot-extrusion process.Experimental results show that the density of high-silicon aluminum alloys prepared with this method

Keywords： coefficient     hermeticity     temperature     relationship     air-atomization    

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Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Strategic Study of CAE 2000, Volume 2, Issue 1,   Pages 7-17

Abstract: Since silicon based materials as the alternative material systems have received strong growing interest, the manufacturing technologies and applications of SiGe, silicon-on-insulator (SOI) have been introducedFinally, the author outlooks the future scientific and engineering challenges and opportunities for siliconand silicon based materials envisioned for the sub quarter-micro and nanometer integrated circuits as

Keywords： silicon wafers     epitaxial silicon wafers     SiGe     silicon-on-insulator (SOI)     impurities behavior     defects control    

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Title Author Date Type Operation

Effects of nano-silicon and common silicon on lead uptake and translocation in two rice cultivars

Jianguo LIU,Hui CAI,Congcong MEI,Mingxin WANG

Journal Article

Ultrathin microcrystalline hydrogenated Si/Ge alloyed tandem solar cells towards full solar spectrum

Yu Cao, Xinyun Zhu, Xingyu Tong, Jing Zhou, Jian Ni, Jianjun Zhang, Jinbo Pang

Journal Article

Enhancing the photoelectrochemical performance of p-silicon through TiO coating decorated with mesoporous

Journal Article

High-quality industrial n-type silicon wafers with an efficiency of over 23% for Si heterojunction solar

Fanying MENG,Jinning LIU,Leilei SHEN,Jianhua SHI,Anjun HAN,Liping ZHANG,Yucheng LIU,Jian YU,Junkai ZHANG,Rui ZHOU,Zhengxin LIU

Journal Article

Porous silica synthesis out of coal fly ash with no residue generation and complete silicon separation

Journal Article

An industrial solution to light-induced degradation of crystalline silicon solar cells

Meng XIE,Changrui REN,Liming FU,Xiaodong QIU,Xuegong YU,Deren YANG

Journal Article

SiO2 passivation layer grown by liquid phase deposition for silicon solar cell application

Yanlin CHEN,Sihua ZHONG,Miao TAN,Wenzhong SHEN

Journal Article

POCl3 diffusion for industrial Si solar cell emitter formation

Hongzhao LI,Kyung KIM,Brett HALLAM,Bram HOEX,Stuart WENHAM,Malcolm ABBOTT

Journal Article

Achieving 12.0% Solar-to-Hydrogen Efficiency with a Trimetallic-Layer-Protected and Catalyzed SiliconPhotoanode Coupled with an Inexpensive Silicon Solar Cell

Lingyun He, Xin Hong, Yiqing Wang, Zhonghang Xing, Jiafeng Geng, Penghui Guo, Jinzhan Su, Shaohua Shen

Journal Article

Heterogeneous III-V silicon photonic integration: components and characterization

Shang-jian ZHANG, Yong LIU, Rong-guo LU, Bao SUN, Lian-shan YAN

Journal Article

Plasma enhanced chemical vapor deposition of excellent a-Si:H passivation layers for a-Si:H/c-Si heterojunction

Lei ZHAO,Wenbin ZHANG,Jingwei CHEN,Hongwei DIAO,Qi WANG,Wenjing WANG

Journal Article

Computer modeling of crystal growth of silicon for solar cells

Lijun LIU, Xin LIU, Zaoyang LI, Koichi KAKIMOTO

Journal Article

Atomistic understanding of interfacial processing mechanism of silicon in water environment: A ReaxFF

Journal Article

Effect of extrusion temperature on the physical properties of high-silicon aluminum alloy

YANG Fuliang, GAN Weiping, CHEN Zhaoke

Journal Article

Behavior of Impurities, Defects and Surface Morphology for Silicon and Silicon Based Semiconducting Materials

Tu Hailing

Journal Article